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LEAST Paper Highlighted in Semiconductor Today

Barbara Walsh • DATE: June 13, 2014

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LEAST Researchers: Jena, Xing, Van de Walle, and Seabaugh have found that a wide (~4.9 eV) bandgap semiconductor Ga2O3 could be peeled into nanomembranes, and demonstrated the fabrication and operation of a high-voltage FET with the membrane as the channel.  The APL paper that acknowledged LEAST/STARnet support was highlighted in Semiconductor Today  Journal Article: High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes.