Most cited publications in LEAST:
Citations according to Google Scholar- 09 Jun 2016
G.Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier,A. Seabaugh, S. Banerjee, L. Colombo "Electronics Based on Two-dimensional Materials," Nature Nanotechnology vol 9, 768–779 (2014) Times Cited 226
S. McDonnell, R. Addou, C. Buie, R.M. Wallace, and C.Hinkle,"Defect-Dominated Doping and Contact Resistance in MoS2," ACS Nano vol. 8 Issue 3, pp. 2880-2888, Jan. 2014. Times Cited 147
S. Chuang, R. Kapadia, C. Battaglia, A. Azcatl, S. McDonnell, J.S.Kang, X.Yin, M.Tosun, R. M. Wallace, A. Javey, "MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx Contacts," Nano Lett., vol. 14 pp 1337-1342 2014. Times Cited 119
C. Gong, H. Zhang, W. Wang, L. Colombo, R.M. Wallace, and K.Cho, "Band Alignment of Two-Dimensional Transitional Metal Dichalcogenides: Application in Tunnel Field Effect Transistors,"Appl. Phys. Lett. vol. 103, 050315, 2013. Times Cited 106
T. Roy, M. Tosun, J.S. Kang, A. Sachid, S, Desai, M. Hettick, C, Hu, A. Javey, "Field-Effect Transistors Built from All Two-Dimensional Material Components," ACS Nano, 2014, 8 (6), pp 6259–6264. Times Cited 113
C. Gong, L. Colombo, R. M. Wallace, K. J. Cho, "The Unusual Mechanism of Partial Fermi Level Pinning at Metal-MoS2 Interfaces," Nano Lett., 14(4), 1714-1720 2014. Times Cited 101
S. Das and J. Appenzeller, "Where Does the Current Flow in Two-Dimensional Layered Systems," Nano Lett., vol. 13, pp. 3396–3402, 2013. Times Cited 71
Y.Lin, N.Lu, N.Perea-Lopez , J. Li , Z. Lin , X. Peng, C. Lee, C. Sun, L. Calderin , P.N. Browning , M. S. Bresnehan, M.Kim, T.S.Mayer , and J.A. Robinson,"Direct Synthesis of Van der Waals Solids," ACS Nano, March 18, 2014. Times Cited 84
N. Ma and D. Jena, "Charge Scattering and Mobility in Atomically Thin Semiconductors," Physical Review X vol. 4, 011043, March 2014. Times Cited 70
C. Gong, C. Huang, J. Miller, L. Cheng, Y. Hao, D. Cobden, J. Kim, R. Ruoff, R.M. Wallace, K.J. Cho, Z. Xu, and Y. Chabal, "Metal Contacts on Physical Vapor Deposited Monolayer MoS2," ACS Nano vol. 7 Issue 12, pp. 11350-11357, Nov. 2013. Times Cited 61
H. Lu and A. Seabaugh, "Tunnel Field-Effect Transistors: State-of-the-Art," Electron Devices Society, May 23,2014. Times Cited 69
C. Battaglia, X.Yin, M. Zheng, I.D. Sharp, T. Chen, S. McDonnell, A. Azcatl, C. Carraro, B. Ma, R. Maboudian, R.M. Wallace, and A. Javey, "Hole Selective MoOx Contact for Silicon Solar Cells," Nano Lett., vol. 14, pp 967-971, 2014. Times Cited 74
S. McDonnell, B. Brennan, A. Azcatl, N. Lu, H. Dong, C. Buie, J. Kim, C. Hinkle, M. Kim, and R.M. Wallace,"HFO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability," ACS Nano vol. 7 issue 11 pp. 10354-10361, Oct. 2013. Times Cited 53
S. Das, A. Prakash, R. Salazar, and J. Appenzeller, "Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides," ACS Nano, 2014,8 (2), pp 1681-1689. Times Cited 52
J. Lyons, A. Janotti, C. Van de Walle, "Effects of Carbon on the Electrical and Optical Properties of InN, GaN and AIN," Physical Review B, vol. 89,035201, Jan 2014. Times Cited 49
M. Li, D. Esseni, G.L. Snider, D.Jena, H.G.Xing,"Single Particle Transport in Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor," Journal of Applied Physics, Feb. 2014. Times Cited 48
S. Raghavan, S. J. Allen, and S. Stemmer, "Subband structure of two-dimensional electron gases in SrTiO3, " Appl. Phys. Lett., vol. 103, 212103 2013. Times Cited 27
N. Ma and D. Jena, "Interband Tunneling in Two-Dimensional Crystal Semiconductors," Appl. Phys. Lett., vol. 102, 132102, 2013. Times Cited 22
H. Liu, R. Vaddi, S, Datta, V. Narayanan,"Tunnel FET-based Ultra-Low Power, High Sensitivity UHF RFID Rectifier," ISLPED, IEEE International Symposium, 2013. Times Cited 23
W.S. Hwang, A. Verma, H. Peelaers, V.Protasenko, S.Rouvimov, H.Xing, A. C. Seabaugh, W. Haensch, C. G.Van de Walle, M. Albrecht, R. Fornari, Z. Galazka, and D.Jena, "High-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes,"Applied Physics Letters, May 2014. Times Cited 20
I. Palit, X. Sharon Hu, J. Nahas, and M. Niemier, "TFET based Cellular Neural Network Architectures," ISLPED, IEEE International Symposium, 2013. Times Cited 15
K. Swaminathan, E. Kultursay, V. Saripallu, V. Narayanan, M. Kandemir, S. Datta, "Steep Slope Devices: From Dark to Dim Silicon," IEEE Micro 33 2013. Times Cited 16
L. Gordon, J.Lyons, A. Janotti, and C.Van de Walle,"Hybrid Functional Calculations of DX Centers in AIN and GaN," Phys. Rev. B, Feb, 18, 2014. Times Cited 18
J.H. Park, A. Kummel, J. Royer, E. Chagarov, T. Kaufman-Osborn, M. Edmonds, T. Kent, S. Lee, W. Trogler, "Atomic Imaging of the Irreversible Sensing Mechanism of NO(2) Adsorption on Copper Phthalocyanine," Journal of the American Chemical Society, vol. 135, 39, pp. 14600-14609, Aug. 2013. Times Cited 17
B. Chakrabarti, R. Galatage, E. M. Vogel, "Multilevel Switching in Forming-free Resistive Memory Devices with Atomic Layer Deposited HfTiO(x) Nanolaminate," Electron Device Letters, 34(7), 1714-1720 2013.Times Cited 10
C. Van de Walle, M. Choi, J. Weber, J. Lyons and A. Janotti, "Defects at Ge/oxide and III-V/Oxide Interfaces," Microelectronic Engineering, vol. 109, pp. 211-215, Sept. 2013. Times Cited 12
Selected other publications from the LEAST research team:
D. Jena, "Tunneling Transistors Based on Graphene and 2-D Crystals," IEEE Proc., vol. 101, pp. 1585-1602, 2013.
P. Zhao, R. Feenstra, G. Gu, and D. Jena, "SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor," IEEE Trans. Electron Devices, vol. 60, pp. 951-957, 2013.
M. Choi, J. Lyons, A. Janotti and C. Van de Walle, “Impact of carbon and nitrogen impurities in high-k dielectrics on metal-oxide-semiconductor-based devices,” Appl. Phys. Lett. 102, 142902, 2013.
M. Choi, A. Janotti and C. Van de Walle, “Native point defects in LaAlO3: A hybrid functional study,” Phys. Rev. B 88, 214117, 2013.
L. Bjaalie, B. Himmetoglu, L. Weston, A. Janotti and C. G. Van de Walle, “Oxide interfaces for novel electronic applications,” New J. Phys. 16, 025005, 2014.