Most cited publications in LEAST:
Citations according to Google Scholar- 08 July 2014
S. Das and J. Appenzeller, "Where Does the Current Flow in Two-Dimensional Layered Systems," Nano Lett., vol. 13, pp. 3396–3402, 2013. Times Cited 13
C. Gong, H. Zhang, W. Wang, L. Colombo, R.M. Wallace, and K.Cho, "Band Alignment of Two-Dimensional Transitional Metal Dichalcogenides: Application in Tunnel Field Effect Transistors,"Appl. Phys. Lett. vol. 103, 050315, 2013. Times Cited 11
N. Ma and D. Jena, "Interband Tunneling in Two-Dimensional Crystal Semiconductors," Appl. Phys. Lett., vol. 102, 132102, 2013. Times Cited 6
C. Van de Walle, M. Choi, J. Weber, J. Lyons and A. Janotti, "Defects at Ge/oxide and III-V/Oxide Interfaces," Microelectronic Engineering, vol. 109, pp. 211-215, Sept. 2013. Times Cited 3
C. Gong, C. Huang, J. Miller, L. Cheng, Y. Hao, D. Cobden, J. Kim, R. Ruoff, R.M. Wallace, K.J. Cho, Z. Xu, and Y. Chabal, "Metal Contacts on Physical Vapor Deposited Monolayer MoS2," ACS Nano vol. 7 Issue 12, pp. 11350-11357, Nov. 2013. Times Cited 8
S. McDonnell, B. Brennan, A. Azcatl, N. Lu, H. Dong, C. Buie, J. Kim, C. Hinkle, M. Kim, and R.M. Wallace,"HFO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability," ACS Nano vol. 7 issue 11 pp. 10354-10361, Oct. 2013. Times Cited 3
C. Battaglia, X.Yin, M. Zheng, I.D. Sharp, T. Chen, S. McDonnell, A. Azcatl, C. Carraro, B. Ma, R. Maboudian, R.M. Wallace, and A. Javey, "Hole Selective MoOx Contact for Silicon Solar Cells," Nano Lett., vol. 14, pp 967-971, 2014. Times Cited 5
J. Lyons, A. Janotti, C. Van de Walle, "Effects of Carbon on the Electrical and Optical Properties of InN, GaN and AIN," Physical Review B, vol. 89,035201, Jan 2014. Times Cited 2
N. Ma and D. Jena, "Charge Scattering and Mobility in Atomically Thin Semiconductors," Physical Review X vol. 4, 011043, March 2014. Times Cited 2
J.H. Park, A. Kummel, J. Royer, E. Chagarov, T. Kaufman-Osborn, M. Edmonds, T. Kent, S. Lee, W. Trogler, "Atomic Imaging of the Irreversible Sensing Mechanism of NO(2) Adsorption on Copper Phthalocyanine," Journal of the American Chemical Society, vol. 135, 39, pp. 14600-14609, Aug. 2013. Times Cited 2
S. Raghavan, S. J. Allen, and S. Stemmer, "Subband structure of two-dimensional electron gases in SrTiO3, " Appl. Phys. Lett., vol. 103, 212103 2013. Times Cited 1
S. McDonnell, R. Addou, C. Buie, R.M. Wallace, and C.Hinkle,"Defect-Dominated Doping and Contact Resistance in MoS2," ACS Nano vol. 8 Issue 3, pp. 2880-2888, Jan. 2014. Times Cited 3
Selected other publications from the LEAST research team:
D. Jena, "Tunneling Transistors Based on Graphene and 2-D Crystals," IEEE Proc., vol. 101, pp. 1585-1602, 2013.
P. Zhao, R. Feenstra, G. Gu, and D. Jena, "SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor," IEEE Trans. Electron Devices, vol. 60, pp. 951-957, 2013.
M. Choi, J. Lyons, A. Janotti and C. Van de Walle, “Impact of carbon and nitrogen impurities in high-k dielectrics on metal-oxide-semiconductor-based devices,” Appl. Phys. Lett. 102, 142902, 2013.
M. Choi, A. Janotti and C. Van de Walle, “Native point defects in LaAlO3: A hybrid functional study,” Phys. Rev. B 88, 214117, 2013.
L. Bjaalie, B. Himmetoglu, L. Weston, A. Janotti and C. G. Van de Walle, “Oxide interfaces for novel electronic applications,” New J. Phys. 16, 025005, 2014.