Home > News > STARnet eWorkshop: Multi-THz HBT Development: the 64​​nm and 32​nm Nodes

STARnet eWorkshop: Multi-THz HBT Development: the 64​​nm and 32​nm Nodes

Start: 12/6/2017 at 1:00PM
End: 12/6/2017 at 2:00PM
Location: Webex
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30nm node InP-HBTs provide 1.1THz power-gain cutoff frequency and 3.5V breakdown. Applications include the high-speed/high-frequency sections of ~90-340GHz wireless and wireline links and 50-250Gb/s optical links. If properly scaled, 64nm and 32nm InP HBTs should provide 1.4:1 and 2:1 higher cutoff frequencies, providing either higher performance (noise, power, gain, efficiency, linearity) or operation at proportionally higher frequencies. The key difficulties we face in developing these technologies are in defining emitter-base junctions, together with contact and via, at the necessary small widths, and in obtaining sufficiently low resistivity yet shallow base Ohmic contacts. We will describe our emitter-base junction process technology, in our present HBTs, and our planned base-collector process flow, in development. We hope, by the time of this course, to have wideband 64nm HBTs.

Bio: Yihao Fang was born in Shanghai, China, in 1992. He received his B.Sc. degree from the University of California Los Angeles (UCLA) in Materials Science and Engineering with a concentration in Electronic Materials in 2016. He was an undergraduate research assistant in Prof. Yang Yang’s lab at UCLA from 2013 to 2016, and worked on organic semiconductors and organic-halide perovskites. In 2016, he joined the Electrical Engineering Department at the University of California Santa Barbara (UCSB), where he is currently a Ph.D. candidate in Professor Mark Rodwell’s group. His research interests include III/V semiconductors, heterojunction bipolar transistors (HBTs), tunneling field effect transistors (TFETs), and terahertz III/V metal-oxide-semiconductor field effect transistors (MOSFETs).